Back-End-of-Line Compatible HfO<sub>2</sub>/ZrO<sub>2</sub> Superlattice Ferroelectric Capacitor With High Endurance and Remnant Polarization-Reference-Cited by-同舟云学术

Back-End-of-Line Compatible HfO₂/ZrO₂ Superlattice Ferroelectric Capacitor With High Endurance and Remnant Polarization

Published:2023-06 Issue:6 Volume:44 Page:1011-1014
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Cui Boyao¹,Wang Xuepei¹^ORCID,Li Yuchun²,Wu Maokun¹,Wu Yishan¹,Liu Jinhao¹^ORCID,Li Xiaoxi²,Ren Pengpeng¹,Ye Sheng¹,Ji Zhigang¹^ORCID,Lu Hongliang²^ORCID,Wang Runsheng³^ORCID,Zhang David Wei²,Huang Ru³

Affiliation:

1. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China

2. State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics and Systems, School of Microelectronics, Fudan University, Shanghai, China

3. Institute of Microelectronics, Peking University, Beijing, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10132335/10097462.pdf?arnumber=10097462

Reference17 articles.

1. HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability