Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO<sub>2</sub>-Based Thin Films-Reference-Cited by-同舟云学术

Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO₂-Based Thin Films

Author:

Chen Jiajia¹,Jin Chengji¹^ORCID,Yu Xiao¹^ORCID,Jia Xiaole¹,Peng Yue²,Liu Yan²^ORCID,Chen Bing³^ORCID,Cheng Ran³^ORCID,Han Genquan¹^ORCID

Affiliation:

1. Research Center for Intelligent Chips and Devices, Zhejiang Lab, Hangzhou, China

2. School of Microelectronics, Xidian University, Xi’an, China

3. School of Micro-Nano Electronics, Zhejiang University, Hangzhou, China

Funder

National Key Research and Development Project

National Natural Science Foundation of China

Scientific Research Project of Zhejiang Lab

Zhejiang Provincial Natural Science Foundation

Zhejiang Province Key Research and Development programs

Qianjiang Talent Project of Zhejiang Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference32 articles.

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