Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films
Author:
Affiliation:
1. Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193 Barcelona, Spain
Funder
China Scholarship Council
Generalitat de Catalunya
Spanish Ministerio de Ciencia e Innovación
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0017738
Reference34 articles.
1. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
2. Review and perspective on ferroelectric HfO2-based thin films for memory applications
3. Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping
4. High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films
5. Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors
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1. Optimizing the Ferroelectric Performance of Hf0.5Zr0.5O2 Epitaxial Film by La0.67Sr0.33MnO3 Capping Layer;Advanced Electronic Materials;2024-08-05
2. Influence of oxygen pressure on the ferroelectricity of pulsed laser deposition fabricated epitaxial Y-doped HfO2;Journal of Applied Physics;2024-07-03
3. Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications;Chip;2024-06
4. Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories;Applied Physics Letters;2024-05-06
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