Dynamic Characteristics of Normally-OFF Silicon Carbide JFET-Reference-Cited by-同舟云学术

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Dynamic Characteristics of Normally-OFF Silicon Carbide JFET

Published:2021-12-20 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE 2nd International Conference on Signal, Control and Communication (SCC)
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Author:

Shili K.¹,Gharbi R.²,Karoui M. Ben²

Affiliation:

1. Université Centrale,Ecole Centrale Polytechnique Privée de Tunis – PolyTech,Depertment IEEE,Tunis

2. University of Tunis,Laboratoire des Semi-Conducteurs et Dispositifs Electroniques. C3S, Ecole Supérieure des Sciences et Techniques de Tunis,Tunis,Tunisia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9768305/9768337/09768362.pdf?arnumber=9768362

Reference12 articles.

1. Temperature effects on static behavior of the power JFET Normally-Off transistor based on 4H-SiC;shili;International Conference on Control Engineering & Information Technology CEIT’14,2014

2. Performance of 15 mm² 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current

3. On understanding and driving SiC power JFETs

4. Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

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