On understanding and driving SiC power JFETs-Reference-Cited by-同舟云学术

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On understanding and driving SiC power JFETs

Published:2011-03 Issue: Volume: Page:
ISSN:
Container-title:2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Abuishmais Ibrahim,Basu Supratim,Undeland Tore. M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5740654/5744557/05744727.pdf?arnumber=5744727

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic Characteristics of Normally-OFF Silicon Carbide JFET;2021 IEEE 2nd International Conference on Signal, Control and Communication (SCC);2021-12-20

2. AC‐coupled gate driver with gate current switch under single power supply for normally‐off SiC JFET;IEEJ Transactions on Electrical and Electronic Engineering;2020-09-28

3. Gate and Base Drivers for Silicon Carbide Power Transistors: An Overview;IEEE Transactions on Power Electronics;2015

4. Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter;IEEE Transactions on Power Electronics;2014-05

5. Characteristics and Application of Normally-Off SiC-JFETs in Converters Without Antiparallel Diodes;IEEE Transactions on Power Electronics;2013-10

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