AC‐coupled gate driver with gate current switch under single power supply for normally‐off SiC JFET

Author:

Sakamoto Kozo12,Yokoyama Natsuki3,Hozoji Hiroshi4

Affiliation:

1. Hitachi Research Laboratory, Research & Development Group Hitachi Ltd. 7‐1‐1, Omika‐cho, Hitachi‐shi Ibaraki 319‐1292 Japan

2. Graduate School of Science and Engineering Ibaraki University 4‐12‐1, Nakanarusawa, Hitachi‐shi Ibaraki 316‐8511 Japan

3. Center for Technology Innovation – Electronics, Research & Development Group Hitachi Ltd. 1‐280, Higashi‐Koigakubo, Kokubunji‐shi Tokyo 185‐8601 Japan

4. Center for Technology Innovation – Material, Research & Development Group Hitachi Ltd. 7‐1‐1, Omika‐cho, Hitachi‐shi Ibaraki 319‐1292 Japan

Publisher

Wiley

Subject

Electrical and Electronic Engineering

Reference29 articles.

1. A comparative evaluation of SiC power devices for high‐performance domestic induction heating;Sarnago H;IEEE Transactions on Industrial Electronics,2015

2. Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

3. RodriguezLAG WilliamsE BaldaJC StewartC. A comparison of selected silicon and silicon‐carbide switching devices for PV microinverter applications.Proc. IEEE Int. Symp. on Power Electron. for Distributed Generation Syst. Rogers AR USA 2013; 1–7.

4. ChoudhuryA. Present status of SiC based power converters and gate drivers – A review.International Power Electronics Conference (IPEC‐Niigata 2018‐ECCE Asia) 2018; 3401–3405.

5. Overview of high voltage SiC power semiconductor devices: Development and application;Ji S;CES Transaction on Electrical Machines and System,2017

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