Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications-Reference-Cited by-同舟云学术

Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

Published:2010-01-05 Issue:1 Volume:10 Page:388-399
ISSN:1424-8220
Container-title:Sensors
language:en
Short-container-title:Sensors

Author:

Salah Tarek,Khachroumi Sofiane,Morel Hervé

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Biochemistry,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Link

http://www.mdpi.com/1424-8220/10/1/388/pdf

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4. Reverse Biased Pt/Nanostructured MoO3/SiC Schottky Diode Based Hydrogen Gas Sensors;Yu;App. Phys. Lett,2009

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