Affiliation:
1. TranSiC /Fairchild Semiconductor.
Abstract
Recently 63 m, 100 m, and 125 m 1200 V normally-off SiC VJFETs have become commercially available and 99% efficiency has been demonstrated in a single-phase solar inverter using these components [1]. They exhibit low specific on-resistance (3 m∙cm2), high saturation current density (1000 A∙cm-2), and low switching losses. For some applications, including 30 to 100 kW inverter modules and those requiring high surge current capability, larger die size is required. This paper reports the static and dynamic performance of 15 mm2 1200 V normally-off VJFETs with 25 m on-resistance and 120 A saturation current at 25 °C.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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