Comments on "GaAs FET device and circuit simulation in SPICE"
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31984/01487063.pdf?arnumber=1487063
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Look-up table based I-V model for GaN HEMT devices for Microwave Applications;Microprocessors and Microsystems;2021-06
2. A Compact Physical AlGaN/GaN HFET Model;IEEE Transactions on Electron Devices;2013-02
3. Division by current: a new approach to FET capacitance modeling;International Journal of Microwave and Wireless Technologies;2011-02
4. A new rule for MESFET gate charge division based on the energy conservation principle;International Journal of Circuit Theory and Applications;2004
5. A new CAD oriented charge conserving capacitance model for HEMTs;Microelectronic Engineering;1998-08
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