Division by current: a new approach to FET capacitance modeling

Author:

Maas Stephen

Abstract

This paper introduces a new approach to the modeling of capacitance in field-effect transistor (FET) devices, which we call division by current. It is compared with existing formulations, which we call division by capacitance and division by charge. In doing so, it is necessary to normalize the theory of nonlinear capacitances and to clarify a number of matters. These include charge conservation and determination of charge functions from capacitance measurements, which are often misstated in the literature. We find the division by current formulation to be practical and to have significant advantages in the generation of FET models and in circuit simulation.

Publisher

Cambridge University Press (CUP)

Subject

Electrical and Electronic Engineering

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances;IEEE Transactions on Microwave Theory and Techniques;2021-07

2. ANN-Based Large-Signal Model of AlGaN/GaN HEMTs With Accurate Buffer-Related Trapping Effects Characterization;IEEE Transactions on Microwave Theory and Techniques;2020-07

3. A Compact Physical AlGaN/GaN HFET Model;IEEE Transactions on Electron Devices;2013-02

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