Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. A new empirical nonlinear model for HEMT and MESFET devices
2. A model for the capacitance—Voltage characteristics of MODFET's
3. M. Shur, GaAs Devices and Circuits, Plenum Press, New York, 1987.
4. K. Lee, M. Shur, T.A. Fjeldly, T. Ytterdal, Semiconductor Device Modeling for VLSI, Series in Electronics and VLSI, Prentice-Hall, NJ, 1993.
5. Bias dependence of capacitances in modulation-doped FET's at 4 GHz
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