T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference23 articles.
1. Calculation of the conduction band discontinuity for InAlAs/InGaAs heterojunction;Weslch;J. Appl. Phys.,1984
2. Measurement of the Γ–L separation in InGaAs by ultraviolet photoemission;Chen;Appl. Phys. Lett.,1980
3. Physics of breakdown in InAlAs/ n+-InGaAs heterostructure field-effect transistors;Bahl;IEEE Trans. Electron Devices,1994
4. Jurgen Dickmann and Steffen Schildberg, Off state breakdown in InAlAs/InGaAs MODFET’s;Bahl;IEEE Trans. Electron Device,1995
5. Monte Carlo study of the dynamic breakdown effects in HEMT’s;Carlo;IEEE Electron Device Lett.,2000
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT;Superlattices and Microstructures;2021-08
2. Quadruple Gate-Recessed AlGaN/GaN Fin-Nanochannel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors;IEEE Transactions on Electron Devices;2021-01
3. Investigation of InP/InGaAs metamorphic co-integrated complementary doping-channel field-effect transistors for logic application;Superlattices and Microstructures;2014-01
4. Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation;Superlattices and Microstructures;2010-06
5. Metal Insulator Gate Geometric HEMT: Novel Attributes and Design Consideration for High Speed Analog Applications;JSTS:Journal of Semiconductor Technology and Science;2010-03-31
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3