Look-up table based I-V model for GaN HEMT devices for Microwave Applications
Author:
Publisher
Elsevier BV
Subject
Artificial Intelligence,Computer Networks and Communications,Hardware and Architecture,Software
Reference32 articles.
1. Computer calculation of large-signal GaAs FET amplifier characteristics;Materka;IEEE Trans. Microw. Theory Tech.,1985
2. GaAs FET Large signal model and its application to circuit designs;Tajima;IEEE Trans. On Electron Devices,1981
3. GaAs FET Device and circuit simulation in SPICE;Statz;IEEE Trans. On Electron Devices,1987
4. Simulation study on the electrical characteristic of AlGaN/GaN high electron mobility transistors with AIN spacer layer;Shrestha;Jpn. J. Appl. Phys.,2014
5. Modeling-meets-for-intermodulation-analysis-of-mixers-and-amplifiers;Mass;IEEE MTT-Digest,1990
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The Establishment of Temperature-Dependent DC I-V Model for GaN HEMTs;2022 IEEE 5th International Conference on Electronics Technology (ICET);2022-05-13
2. Surface chemical disorder and lattice strain of GaN implanted by 3 MeV Fe10+ ions;Chinese Physics B;2021-11-06
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