Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels-Reference-Cited by-同舟云学术

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Gate-All-Around Junctionless Transistors With Heavily Doped Polysilicon Nanowire Channels

Published:2011-04 Issue:4 Volume:32 Page:521-523
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Su Chun-Jung,Tsai Tzu-I,Liou Yu-Ling,Lin Zer-Ming,Lin Horng-Chih,Chao Tien-Sheng

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5737828/05716662.pdf?arnumber=5716662

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