Deep Dry Etching Patterned Silicon Using GeSbSnOx Thermal Lithography Photoresist-Reference-Cited by-同舟云学术

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Deep Dry Etching Patterned Silicon Using GeSbSnOx Thermal Lithography Photoresist

Published:2011-03 Issue:3 Volume:47 Page:560-563
ISSN:0018-9464
Container-title:IEEE Transactions on Magnetics
language:
Short-container-title:IEEE Trans. Magn.

Author:

Lin Yu-Hsuan,Yang Chih-Chung,Yang Chin-Tien,Chen Shi-Wei,Chu Chin-Ming,Chiang Donyau

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/20/5721798/05721812.pdf?arnumber=5721812

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective dry etching of silicon with heat-mode resist GeSb for the preparation of metasurfaces;Materials Science in Semiconductor Processing;2024-12

2. Selective Dry Etching of Silicon with Heat-Mode Resist Gesb for the Preparation of Metasurfaces;2024

3. Pattern Transfer for Laser Heat-Mode Lithography;Laser Heat-Mode Lithography;2019

4. Manipulation and simulations of thermal field profiles in laser heat-mode lithography;Journal of Applied Physics;2017-12-14

5. A study on inorganic phase-change resist Ge2Sb2(1−x)Bi2xTe5and its mechanism;Phys. Chem. Chem. Phys.;2014-09-09

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