Investigation of Recovery Phenomena in Hf0.5Zr0.5O2-Based 1T1C FeRAM-Reference-Cited by-同舟云学术

Investigation of Recovery Phenomena in Hf_0.5Zr_0.5O₂-Based 1T1C FeRAM

Published:2023 Issue: Volume:11 Page:43-46
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Okuno Jun¹^ORCID,Yonai Tsubasa¹,Kunihiro Takafumi¹,Shuto Yusuke¹,Alcala Ruben²^ORCID,Lederer Maximilian³^ORCID,Seidel Konrad³,Mikolajick Thomas²^ORCID,Schroeder Uwe²^ORCID,Tsukamoto Masanori¹,Umebayashi Taku¹

Affiliation:

1. Research Division 1, Sony Semiconductor Solutions Corporation, Atsugi, Kanagawa, Japan

2. NaMLab gGmbH, Dresden, Germany

3. Fraunhofer IPMS-Center Nanoelectronics Technologies, Dresden, Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/10049274/09993736.pdf?arnumber=9993736

Reference23 articles.

1. Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

2. High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application

3. Controlling the Formation of Conductive Pathways in Memristive Devices

4. Root cause of degradation in novel HfO2-based ferroelectric memories;peric;Proc IEEE Symp VLSI Technol IEEE Int Rel Phys Symp (IRPS),2016

5. Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories;yurchuk;Proc IEEE Symp VLSI Technol Int Rel Phys Symp (IRPS),2014

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects;Current Opinion in Solid State and Materials Science;2024-09

2. Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications;Chip;2024-06

3. Ferroelectric capacitors with triple level cell storage capability at low operating voltage by introducing TiN interlayer;Applied Physics Letters;2024-04-15

4. Methodology for Testing Key Parameters of Array-Level Small-Area Hafnium-Based Ferroelectric Capacitors Using Time-to-Digital Converter and Capacitance Calibration Circuits;Micromachines;2023-09-27

5. Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited);2023 IEEE International Reliability Physics Symposium (IRPS);2023-03