Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited)-Reference-Cited by-同舟云学术

Reliability assessment of hafnia-based ferroelectric devices and arrays for memory and AI applications (Invited)

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
language:
Short-container-title:

Author:

Grenouillet L.¹,Barbot J.¹,Laguerre J.¹,Martin S.¹,Carabasse C.¹,Louro M.¹,Bedjaoui M.¹,Minoret S.¹,Kerdilès S.¹,Boixaderas C.¹,Magis T.¹,Jahan C.¹,Andrieu F.¹,Coignus J.¹

Affiliation:

1. University Grenoble Alpes, CEA, LETI,Grenoble,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118099.pdf?arnumber=10118099

Reference41 articles.

1. Mimicking Biological Neurons with a Nanoscale Ferroelectric Transistor;halid;Nanoscale,2018

2. Ferroelectric deep trench capacitors based on Al:HfO2 for 3D nonvolatile memory applications

3. FeFET: A Versatile CMOS Compatible Device with Game-Changing Potential;sven;2020 IEEE International Memory Workshop (IMW),2020

4. A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. DenRAM: neuromorphic dendritic architecture with RRAM for efficient temporal processing with delays;Nature Communications;2024-04-24

2. Multi-state nonvolatile capacitances in HfO2-based ferroelectric capacitor for neuromorphic computing;Applied Physics Letters;2024-03-04

3. Multi-Level, Low-Voltage Programming of Ferroelectric HfO₂/ZrO₂ Nanolaminates Integrated in the Back-End-Of-Line;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

4. Back‐End‐of‐Line Integration of Synaptic Weights using HfO₂/ZrO₂ Nanolaminates;Advanced Electronic Materials;2024-02-07

5. On the Thickness Scaling of Ferroelectric Hafnia;IEEE Transactions on Materials for Electron Devices;2024