Reliability Study of 1T1C FeRAM Arrays With Hf<sub>0.5</sub>Zr<sub>0.5</sub>O₂ Thickness Scaling-Reference-Cited by-同舟云学术

Reliability Study of 1T1C FeRAM Arrays With Hf_0.5Zr_0.5O₂ Thickness Scaling

Published:2022 Issue: Volume:10 Page:778-783
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Okuno Jun¹^ORCID,Kunihiro Takafumi¹,Konishi Kenta¹,Shuto Yusuke¹,Sugaya Fumitaka¹,Materano Monica²,Ali Tarek³^ORCID,Lederer Maximilian³^ORCID,Kuehnel Kati³,Seidel Konrad³,Mikolajick Thomas²^ORCID,Schroeder Uwe²^ORCID,Tsukamoto Masanori¹,Umebayashi Taku¹

Affiliation:

1. Research Division 1, Sony Semiconductor Solutions Corporation, Atsugi, Japan

2. NaMLab gGmbH, Dresden, Germany

3. Fraunhofer IPMS—Center Nanoelectronics Technologies, Dresden, Germany

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09810188.pdf?arnumber=9810188

Reference23 articles.

1. Improved State Stability of HfO2 Ferroelectric Tunnel Junction by Template-Induced Crystallization and Remote Scavenging for Efficient in-Memory Reinforcement Learning

2. Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O? scaled FeRAM co-integrated with 130 nm CMOS for embedded NVM applications;francois;Proc IEEE Int Electron Devices Meeting (IEDM),2019

3. SoC Compatible 1T1C FeRAM Memory Array Based on Ferroelectric Hf0.5Zr0.5O2

4. 1T1C FeRAM memory array based on ferroelectric HZO with capacitor under bitline

5. Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications

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1. Role of charge injection/de-trapping in imprint behavior of ferroelectric Hf0.5Zr0.5O2 thin film;Applied Physics Letters;2024-08-12

2. Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO₂–ZrO₂ ferroelectric films with different thicknesses;Nanotechnology;2024-06-24

3. Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O₂-Based Ferroelectric NVDRAM;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Dielectric breakdown behavior of ferroelectric HfO₂ capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy;Japanese Journal of Applied Physics;2024-02-05

5. On the Thickness Scaling of Ferroelectric Hafnia;IEEE Transactions on Materials for Electron Devices;2024