Power cycling test of a 650 V discrete GaN-on-Si power device with a laminated packaging embedding technology

Author:

Song Sungyoung,Munk-Nielsen Stig,Uhrenfeldt Christian,Pedersen Kjeld

Publisher

IEEE

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Design and Optimization of 100 V GaN Multi-chip Power Micromodule Based on AlN DBC Substrate;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28

2. Lifetime Estimation of HD-GITs based on Drain Leakage Current;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

3. Thermal Modeling of E-Mode GaN HEMTs under Wide-Range Thermal Cycling Tests;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

4. Electrothermal power cycling of GaN and SiC cascode devices;Microelectronics Reliability;2023-11

5. Investigation of Performance Degradation in 600-V HD-GITs Under Power Cycling Tests;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-02

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