Investigation of Performance Degradation in 600-V HD-GITs Under Power Cycling Tests-Reference-Cited by-同舟云学术

Investigation of Performance Degradation in 600-V HD-GITs Under Power Cycling Tests

Published:2023-02 Issue:1 Volume:11 Page:1111-1120
ISSN:2168-6777
Container-title:IEEE Journal of Emerging and Selected Topics in Power Electronics
language:
Short-container-title:IEEE J. Emerg. Sel. Topics Power Electron.

Author:

Huang Xu¹^ORCID,Sun Pengju¹^ORCID,He Zhiyuan²^ORCID,Lu Guoguang²,Du Xiong¹^ORCID,Luo Quanming¹^ORCID

Affiliation:

1. State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing, China

2. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic, Product Reliability and Environmental Testing Research Institute, Guangzhou, China

Funder

Key-Area Research and Development Program of Guangdong Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Link

http://xplorestaging.ieee.org/ielx7/6245517/10035753/09915581.pdf?arnumber=9915581

Reference22 articles.

1. Advanced temperature estimation in low Rds,on p-GaN HEMT devices for performing power cycling tests;franke;Proc PCIM Eur Int Exhib Conf Power Electron Intell Motion Renew Energy Manag,2019

2. Reliability of GaN GIT devices in power cycling tests with RDS(on)(T) and VGS(T) for junction temperature calculation;boldyrjew-mast;Proc PCIM Eur Digit Int Exhib Conf Power Electron Intell Motion Renew Energy Manag,2020

3. Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test

4. Power cycling test of a 650 V discrete GaN-on-Si power device with a laminated packaging embedding technology

5. Reliability test results of PCB soldered GaN GIT devices;boldyrjew-mast;Proc PCIM Europe,2019

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Power Cycling Degradation on the Dynamic ON-Resistance of HD-GITs;IEEE Transactions on Industrial Electronics;2024-11

2. Lifetime Estimation of HD-GITs based on Drain Leakage Current;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

3. Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives;IEEE Transactions on Electron Devices;2024-03

4. GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives;2023 AEIT International Conference on Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE);2023-07-17