Design and Optimization of 100 V GaN Multi-chip Power Micromodule Based on AlN DBC Substrate-Reference-Cited by-同舟云学术

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Design and Optimization of 100 V GaN Multi-chip Power Micromodule Based on AlN DBC Substrate

Published:2024-06-28 Issue: Volume: Page:1180-1184
ISSN:
Container-title:2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Polyntsev Egor S.¹,Kodorova Irina Y.¹,Aksenov Andrey A.²,Kagadey Valery A.³

Affiliation:

1. National Research Tomsk State University,Tomsk branch of JSC «Radar mms»,Integrated Circuit Design Department,Tomsk,Russia

2. Tomsk branch of JSC «Radar mms»,Integrated Circuit Design Department,Tomsk,Russia

3. Tomsk branch of JSC «Radar mms»,Tomsk,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10614947/10614948/10614962.pdf?arnumber=10614962

Reference19 articles.

1. GaN Technology for Power Electronic Applications: A Review

2. An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications

3. kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800 V and 100 kHz

4. Design and Implementation of a GaN-Based, 100-kHz, 102-W/in3Single-Phase Inverter

5. Leveraging GaN for DC-DC Power Modules for Efficient EVs: A Review

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal Analysis of Packaging Solution for GaN Multi-Chip Power Micromodule;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28

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