Electro-Thermal and Trapping Characterization of AlGaN/GaN RF Power HEMTs-Reference-Cited by-同舟云学术

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Electro-Thermal and Trapping Characterization of AlGaN/GaN RF Power HEMTs

Published:2021-12-05 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Pedro Jose,Gomes Joao,Nunes Luis

Funder

Fundação para a Ciência e a Tecnologia (FCT)

Ministério da Educação e Ciência (MEC)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682206.pdf?arnumber=9682206

Reference9 articles.

1. Pulsed I/V and S-parameters measurement system for isodynamic characterization of power GaN HEMT transistors;gonçalves;Int J RF Microw Comput -Aided Eng,2018

2. An Accurate Characterization of Capture Time Constants in GaN HEMTs

3. The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-based PAs;gomes;IEEE Trans Microw Theory Techn,0

4. Transient Pulsed S-Parameters for Trapping Characterization

5. A large-signal equivalent circuit model for substrate-induced drain-lag phenomena in HJFETs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RF GaN-HEMT Technology Evaluation Framework Based on Drain Current Transient Measurements;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08

2. Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range;IEEE Transactions on Microwave Theory and Techniques;2023-07

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