Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
40 articles.
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1. Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07
2. An extended-temperature I-V model for GaN HEMTs;Solid-State Electronics;2022-08
3. The Impact of Long-Term Memory Effects on the Linearizability of GaN HEMT-Based Power Amplifiers;IEEE Transactions on Microwave Theory and Techniques;2022-02
4. Electro-Thermal and Trapping Characterization of AlGaN/GaN RF Power HEMTs;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05
5. A Review of Memory Effects in AlGaN/GaN HEMT Based RF PAs;2021 IEEE MTT-S International Wireless Symposium (IWS);2021-05-23