An Accurate Characterization of Capture Time Constants in GaN HEMTs-Reference-Cited by-同舟云学术

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An Accurate Characterization of Capture Time Constants in GaN HEMTs

Published:2019-07 Issue:7 Volume:67 Page:2465-2474
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Gomes Joao L.^ORCID,Nunes Luis C.^ORCID,Goncalves Cristiano F.^ORCID,Pedro Jose C.^ORCID

Funder

Fundação para a Ciência e a Tecnologia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/8751730/08744466.pdf?arnumber=8744466

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past;IEEE Transactions on Microwave Theory and Techniques;2024-09

2. A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs;IEEE Transactions on Electron Devices;2024-07

3. Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07

4. Investigation of Traps Impact on PAE and Linearity of AlGaN/GaN HEMTs Relying on a Combined TCAD–Compact Model Approach;IEEE Transactions on Electron Devices;2024-06

5. A Physics-Based 1-D Equivalent Circuit Model for an AlGaN/GaN HEMT;IEEE Transactions on Microwave Theory and Techniques;2024

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