Transient Pulsed S-Parameters for Trapping Characterization
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9153879/9160025/09160297.pdf?arnumber=9160297
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. TCAD Analysis of GaN HEMT Output Conductance Through Trap Rate Equation Green’s Functions;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08
2. TCAD analysis of GaN HEMT AC parameters through accurate solution of trap rate equations;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
3. On the Energy Nonconservation in the FET’s Equivalent Circuit Capacitance Model;IEEE Transactions on Electron Devices;2023-09
4. TCAD Modeling of GaN HEMT Output Admittance Dispersion through Trap Rate Equation Green’s Functions;Electronics;2023-05-30
5. Electro-Thermal and Trapping Characterization of AlGaN/GaN RF Power HEMTs;2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2021-12-05
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