22FDSOI device towards RF and mmWave applications-Reference-Cited by-同舟云学术

22FDSOI device towards RF and mmWave applications

Published:2021-12-05 Issue: Volume: Page:
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Container-title:2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Zhao Zhixing,Lehmann Steffen,Oo Wei Lun,Sahoo Amit Kumar,Syed Shafi,Le Quang Huy,Huynh Dang Khoa,Chohan Talha,Utess Dirk,Kleimaier Dominik,Wiatr Maciej,Kolodinski Sabine,Mazurier Jerome,Hoentschel Jan,Knorr Andreas,Cahoon Ned,Kneitz Stefan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682480.pdf?arnumber=9682480

Reference14 articles.

1. Small-signal operation of semiconductor devices including self-heating, with application to thermal characterization and instability analysis

2. A 28-GHz Stacked Power Amplifier with 20.7-dBm Output P 1dB in 28-nm Bulk CMOS

3. A 28-GHz SOI-CMOS Doherty Power Amplifier With a Compact Transformer-Based Output Combiner

4. A 28-GHz Doherty Power Amplifier With a Compact Transformer-Based Quadrature Hybrid in 65-nm CMOS

5. 24.1 A 24-to-30GHz Watt-Level Broadband Linear Doherty Power Amplifier with Multi-Primary Distributed-Active-Transformer Power-Combining Supporting 5G NR FR2 64-QAM with >19dBm Average Pout and >19% Average PAE

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1. FD-SOI and RF-SOI technologies for 5G;New Materials and Devices Enabling 5G Applications and Beyond;2024

2. A Compact 120 GHz LNA in 22 nm FD-SOI with Back-Gate Controllable Variable-Gain;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

3. Probe-Dependent Residual Error Analysis for Accurate On-Wafer MOSFET Measurements up to 110 GHz;IEEE Journal of the Electron Devices Society;2023

4. Design and Characterization of a Variable Gain $D$-Band LNA for Optimized Link Budgeting for a 6G Receiver in 22FDX;IEEE Transactions on Microwave Theory and Techniques;2023

5. Impact of Back-Gate Biasing on the Transport Properties of 22 nm FD-SOI MOSFETs at Cryogenic Temperatures;IEEE Transactions on Electron Devices;2022-10