Investigation on Impact of Doped HfO$_{2}$ Thin Film Ferro-Dielectrics on FDSOI NCFET Under Back-Gate Bias Influence
Author:
Affiliation:
1. ECE Department, Indian Institute of Information Technology, Design and Manufacturing (IIITDM), Kancheepuram, Chennai, India
Funder
Science and Engineering Research Board
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Computer Science Applications
Link
http://xplorestaging.ieee.org/ielx7/7729/10016255/09998110.pdf?arnumber=9998110
Reference31 articles.
1. Investigation on performance degradation due to induced interface trapped charges on HSO based FDSOI NCFET and sustaining it through back-gate bias
2. Impact of unpreventable induced interface trapped charges on HZO based FDSOI NCFET
3. 28 nm FDSOI analog and RF Figures of Merit at N2 cryogenic temperatures
4. A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage
5. Effect of back gate biasing in negative capacitance field effect transistor
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1. Analysis of Negative to Positive Differential Conductance Transition in NCFET and Guidelines for Analog Circuit Designing;Nanoscale Field Effect Transistors: Emerging Applications;2023-12-19
2. Novel Ferro-Oxide-Nitride-Oxide-Semiconductor (FONOS) FDSOI FET Towards Memory and Synaptic Applications;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02
3. A Robust-Compact Model to Emulate Neuro-Mimetic Dynamics With Doped-HfO2 Ferroelectric-FET Based Neurons;IEEE Transactions on Nanotechnology;2023
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