Effects of Thermal Annealing on In Situ Phosphorus-Doped Germanium $\hbox{n}^{+}/\hbox{p}$ Junction-Reference-Cited by-同舟云学术

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Effects of Thermal Annealing on In Situ Phosphorus-Doped Germanium $\hbox{n}^{+}/\hbox{p}$ Junction

Published:2013-01 Issue:1 Volume:34 Page:15-17
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Shim Jaewoo,Song I.,Jung W.-S.,Nam J.,Leem J. W.,Yu J. S.,Kim D. E.,Cho W. J.,Kim Y. S.,Jun D.-H.,Heo J.,Park W.,Park Jin-Hong,Saraswat K. C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6387615/06374204.pdf?arnumber=6374204

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dissolution of donor-vacancy clusters in heavily doped n-type germanium;New Journal of Physics;2020-12-01

2. Properties of n-Ge epilayer on Si substrate with in-situ doping technology;Chinese Physics B;2016-06

3. Characteristics of Germanium n+/p junctions formed by phosphorus diffusion from on indium-gallium-phosphide layer;Current Applied Physics;2015-07

4. Effects of junction defect healing in Germanium n-MOSFET through thermal annealing;Current Applied Physics;2015-01

5. First-principles study of Schottky barrier behavior at Fe3Si/Ge(111) interfaces;Japanese Journal of Applied Physics;2014-02-28

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