First-principles study of Schottky barrier behavior at Fe3Si/Ge(111) interfaces
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference51 articles.
1. Magnetic properties of epitaxially grown Fe3Si/Ge(111) layers with atomically flat heterointerfaces
2. Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces
3. Mechanism of Fermi level pinning at metal/germanium interfaces
4. Fermi-level pinning and charge neutrality level in germanium
5. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
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2. Origin of Fermi-level depinning at TiN/Ge(001) interfaces: first-principles study;Japanese Journal of Applied Physics;2019-05-22
3. An ab initio approach to polarity inversion of AlN and GaN films on AlN$(000\bar{1})$ substrate with Al overlayers: an insight from interface energies;Japanese Journal of Applied Physics;2018-07-26
4. Physics of Fermi-Level “Unpinning” at Metal/Ge Interfaces; First-Principles View;ECS Transactions;2018-07-20
5. Defect distribution and Schottky barrier at metal/Ge interfaces: Role of metal-induced gap states;Japanese Journal of Applied Physics;2016-10-03
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