Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3368701
Reference24 articles.
1. Proceedings of Symposium on VLSI Technology;Antoniadis D. A.,2002
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3. High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain
4. Fermi-level pinning and charge neutrality level in germanium
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