Composition Dependent Electrical Transport in Si 1− x Ge x Nanosheets with Monolithic Single‐Elementary Al Contacts-Reference-Cited by-同舟云学术

Composition Dependent Electrical Transport in Si _{1−
x} Ge _x Nanosheets with Monolithic Single‐Elementary Al Contacts

Published:2022-09-22 Issue:44 Volume:18 Page:2204178
ISSN:1613-6810
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language:en
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Author:

Wind Lukas¹^ORCID,Sistani Masiar¹^ORCID,Böckle Raphael¹^ORCID,Smoliner Jürgen¹,Vukŭsić Lada²^ORCID,Aberl Johannes²^ORCID,Brehm Moritz²^ORCID,Schweizer Peter³^ORCID,Maeder Xavier³^ORCID,Michler Johann³^ORCID,Fournel Frank⁴^ORCID,Hartmann Jean‐Michel⁴,Weber Walter M.¹^ORCID

Affiliation:

1. Institute of Solid State Electronics Technische Universität Wien Gußhausstraße 25‐25a Vienna 1040 Austria

2. Institute of Semiconductor and Solid State Physics Johannes Kepler University Altenberger Straße 69 Linz 4040 Austria

3. Swiss Federal Laboratories for Materials Science and Technology Laboratory for Mechanics of Materials and Nanostructures Feuerwerkstrasse 39 Thun 3602 Switzerland

4. CEA‐LETI University Grenoble Alpes 17 Avenue des Martyrs Grenoble 38000 France

Funder

Austrian Science Fund

Publisher

Wiley

Subject

Biomaterials,Biotechnology,General Materials Science,General Chemistry

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/smll.202204178

Reference84 articles.

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2. The fundamental limit on binary switching energy for terascale integration (TSI)