Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETs-Reference-Cited by-同舟云学术

Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETs

Published:2021-12-11 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE International Electron Devices Meeting (IEDM)
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Author:

Huang Shijie¹,Wu Zhenghua²,Xu Haoqing³,Guo Jingrui¹,Xu Lihua¹,Duan XinLv¹,Chen Qian¹,Yang Guanhua¹,Zhang Qingzhu²,Yin Huaxiang,Wang Lingfei¹,Li Ling¹,Liu Ming¹

Affiliation:

1. Institute of Microelectronics of the Chinese Academy of Sciences,Key Laboratory of Microelectronics Devices and Integrated Technology,Beijing,China

2. Advanced Integrated Circuits R&D Center, Institute of Microelectronic of the Chinese Academy of Sciences,Beijing,China,100029

3. University of Chinese Academy of Sciences,Beijing,China

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720550.pdf?arnumber=9720550

Reference14 articles.

1. Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's

2. Analytical modelling for the current–voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs

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