Gate Oxide Instability against a Wide Range of Negative Electric Field Stress of SiC MOSFETs
Author:
Affiliation:
1. Advanced Technology R&D Center, Mitsubishi Electric Corporation,Amagasaki,Hyogo,Japan,661-8661
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9720433/9720494/09720679.pdf?arnumber=9720679
Reference16 articles.
1. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
2. Anode hole injection and trapping in silicon dioxide
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