Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications

Author:

Hai J.1,Cacho F.1,Divay A.2,Lauga-Larroze E.3,Arnould J.-D.3,Forest J.1,Knopik V.1,Garros X.2

Affiliation:

1. STMicroelectronics,Crolles,France,38926

2. Université Grenoble Alpes,CEA-LETI,Grenoble,France,F-38000

3. Univ. Grenoble Alpes,RFIC-Lab,Grenoble,France,38000

Publisher

IEEE

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130nm to 28nm Nodes and Beyond;IEEE Transactions on Device and Materials Reliability;2024-06

2. A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

3. Current Driven Modeling and SILC Investigation of Oxide Breakdown under Off-state TDDB in 28nm dedicated to RF applications;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08

4. Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

5. Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

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