Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays
Author:
Affiliation:
1. TU Vienna,Institute for Microelectronics
2. Infineon Technologies AG,Munich
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764496.pdf?arnumber=9764496
Reference22 articles.
1. NBTI in Nanoscale MOSFETs—The Ultimate Modeling Benchmark
2. On the influence of BTI and HCI on parameter variability
3. A 65nm test structure for the analysis of NBTI induced statistical variation in SRAM transistors
4. BTI variability fundamental understandings and impact on digital logic by the use of extensive dataset
5. Variability in device degradations: Statistical observation of NBTI for 3996 transistors
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1. Time-dependent statistical NBTI model for aging assessment in circuit level implemented with open model interface;Microelectronics Reliability;2023-12
2. Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
3. Assessment of Negative Bias Temperature Instability Due to Interface and Oxide Trapped Charges in Gate-All-Around TFET Devices;IEEE Transactions on Nanotechnology;2023
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