Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability
Author:
Affiliation:
1. Institute for Microelectronics, TU Vienna
2. Infineon Technologies AG,Munich
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117818.pdf?arnumber=10117818
Reference23 articles.
1. A new smart device array structure for statistical investigations of BTI degradation and recovery
2. Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology
3. A general method for numerically simulating the stochastic time evolution of coupled chemical reactions
4. Understanding temperature acceleration for NBTI
5. On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time Scale
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1. Quantifying NBTI Recovery and Its Impact on Lifetime Estimations in Advanced Semiconductor Technologies;2023 9th International Conference on Signal Processing and Communication (ICSC);2023-12-21
2. On the Role of NBTI and PBTI Induced Mobility Degradation for Compact Modeling in Metal-Gate/High-k FETs;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08
3. NBTI Defects Characterization Using Energy Profiling Simulation Technique;2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM);2023-08-28
4. Low-frequency noise in nanowires;Nanoscale;2023
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