NBTI Defects Characterization Using Energy Profiling Simulation Technique-Reference-Cited by-同舟云学术

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NBTI Defects Characterization Using Energy Profiling Simulation Technique

Published:2023-08-28 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)
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Author:

Hussin Hanim¹,Wan Sharifah Fatmadiana²,Soin Norhayati³,Wahab Yasmin Abdul⁴,Muhamad Maizan¹,Alias Nurul Ezaila⁵

Affiliation:

1. Universiti Teknologi MARA,Integrated Microelectronic System and Applications, School of Electrical Engineering, College of Engineering,Shah Alam,Selangor,40450

2. University of Malaya,Muhamad Hatta Faculty of Engineering,Kuala Lumpur,50603

3. University of Malaya,Faculty of Engineering,Kuala Lumpur,50603

4. University of Malaya,Nanotechnology & Catalysis Research Centre,Kuala Lumpur,50603

5. Universiti Teknologi Malaysia,Faculty of Electrical Engineering,Johor Bahru,81310

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10326449/10326731/10326770.pdf?arnumber=10326770

Reference20 articles.

1. Negative bias temperature instability: What do we understand?

2. A two-stage model for negative bias temperature instability

3. Non-hydrogen-transport characteristics of dynamic negative-bias temperature instability;teo;IEEE Electron Device Lett,2010

4. A Model for Switching Traps in Amorphous Oxides

5. Physical origin of the permanent components of the positive charge buildup resulting from NBTI/PBTI stress in nMOS/pMOS transistors

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