Novel Electrical Detection Method for Random Defects on Peripheral Circuits in NAND Flash Memory-Reference-Cited by-同舟云学术

Novel Electrical Detection Method for Random Defects on Peripheral Circuits in NAND Flash Memory

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Nam Bu-Il¹,Choi Youngha¹,Hong Sungki¹,Dong Ki-Young¹,Jung Wontaeck²,Park Sang-Won²,Lee Soon-Yong²,Jung Dooyeun¹,Kim Byoung-Hee¹,Kim Eunkyoung¹,Song Ki-Whan¹,Song Jai Hyuk²,Young Choi Woo³

Affiliation:

1. Samsung Electronics,Flash PE Team,Hwasung,Korea

2. Samsung Electronics,Flash Product & Technology,Hwasung,Korea

3. Seoul National University,Department of Electrical and Computer Engineering,Seoul,Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764437.pdf?arnumber=9764437

Reference14 articles.

1. Intrinsic leakage in low power deep submicron CMOS ICs

2. Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits

3. Temperature effect on I-V characteristics of Si nanowire transistor

4. Defects tail off with six-xigma manufacturing;fieler;IEEE Circuits Dev Mag,1991

5. Six-sigma design (quality control)

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