Vertical GaN Fin JFET: A Power Device with Short Circuit Robustness at Avalanche Breakdown Voltage
Author:
Affiliation:
1. Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,USA
2. NexGen Power Systems Inc,Santa Clara,USA
Funder
National Science Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764569.pdf?arnumber=9764569
Reference38 articles.
1. Failure modes and mechanism analysis of SiC MOSFET under short-circuit conditions
2. Third Quadrant Conduction Loss of 1.2–10 kV SiC MOSFETs: Impact of Gate Bias Control
3. Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection
4. Robustness of SiC JFET in Short-Circuit Modes
5. Some aspects on ruggedness of SiC power devices
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1. Evaluation of Dynamic RON, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
2. Compact Modeling of Power GaN Fin-JFETs I-V Characteristics using ASM-HEMT Model;2024 IEEE Texas Power and Energy Conference (TPEC);2024-02-12
3. Stability, Reliability, and Robustness of GaN Power Devices: A Review;IEEE Transactions on Power Electronics;2023-07
4. Switching of a Bus Voltage of 1400 V at 10 MHz Using Vertical GaN Fin-JFETs;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
5. Switching Performance Evaluation of 650 V Vertical GaN Fin JFET;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19
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