Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection-Reference-Cited by-同舟云学术

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Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection

Published:2013-03 Issue: Volume: Page:
ISSN:
Container-title:2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Huang Xing,Wang Gangyao,Li Yingshuang,Huang Alex Q.,Baliga B. Jayant

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6516132/6520164/06520207.pdf?arnumber=6520207

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique;Micromachines;2023-12-07

2. Wide Bandgap Semiconductors for LVDC Solid State Circuit Breaker applications;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

3. Protection of low voltage DC microgrids: A review;Electric Power Systems Research;2023-12

4. 1.2-kV SiC Superjunction Dual-channel MOSFET with Ultra Low Specific on-Resistance;2022 IEEE 17th Conference on Industrial Electronics and Applications (ICIEA);2022-12-16

5. Silicon Carbide Power Devices;Springer Handbook of Semiconductor Devices;2022-11-11

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