Some aspects on ruggedness of SiC power devices-Reference-Cited by-同舟云学术

Some aspects on ruggedness of SiC power devices

Published:2014-01 Issue:1 Volume:54 Page:49-56
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Lutz Josef,Baburske Roman

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference26 articles.

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4. 2nd Generation 600V SiC schottky diodes use merged pn/Schottky structure for surge overload protection;Bjoerk;Proc APEC,2006

5. Singh R, Sei-Hyung R, Palmour JW, Hefner AR, Lai J. 1500V 4 Amp 4H–SiC JBS Diodes. In: Proceedings of the ISPSD, Toulouse; 2000.

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