Switching Performance Evaluation of 650 V Vertical GaN Fin JFET-Reference-Cited by-同舟云学术

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Switching Performance Evaluation of 650 V Vertical GaN Fin JFET

Published:2023-03-19 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Zhang R.¹,Yang Q.¹,Li Q.¹,Zhang Y.¹,Padilla V.²,Pastore T.²,Meier W.²,Pidaparthi S.²,Drowley C.²

Affiliation:

1. Virginia Polytechnic Institute and State University,Center for Power Electronics Systems,Blacksburg,USA

2. NexGen Power Systems Inc,Santa Clara,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10131044/10130846/10131473.pdf?arnumber=10131473

Reference20 articles.

1. Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes

2. Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes

3. Robust Through-Fin Avalanche in Vertical GaN Fin-JFET With Soft Failure Mode

4. Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of Dynamic R_ON, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. Evaluation and Comparison of Discrete Magnetics and Integrated Magnetics for High Power LLC Converters;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

3. Dynamic R _ON Free 1.2-kV Vertical GaN JFET;IEEE Transactions on Electron Devices;2024-01

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