Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets-Reference-Cited by-同舟云学术

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Bury E.¹,Chasin A.¹,Kaczer B.¹,Vandemaele M.²,Tyaginov S.³,Franco J.¹,Ritzenthaler R.¹,Mertens H.¹,Weckx P.¹,Horiguchi N.¹,Linten D.¹

Affiliation:

1. Imec,Leuven,Belgium,3001

2. KU Leuven,Leuven,Belgium,3001

3. Russian Academy of Sciences,A.F. Ioffe Physical-Technical Institute,Saint-Petersburg,Russia,194021

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764526.pdf?arnumber=9764526

Reference19 articles.

1. Ubiquitous relaxation in BTI stressing—New evaluation and insights

2. Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs

3. Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole;franco;Proc Symposium on VLSI Technology (VLSI),2015

4. Self-heating-aware CMOS reliability characterization using degradation maps

5. Complete degradation mapping of stacked gate-all-around Si nanowire transistors considering both intrinsic and extrinsic effects

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