Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5Zr0.5O2 by Optimizing TiN x Interfacial Capping Layer and Its Fatigue Mechanism-Reference-Cited by-同舟云学术

Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf_0.5Zr_0.5O₂ by Optimizing TiN_x Interfacial Capping Layer and Its Fatigue Mechanism

Published:2024-04 Issue:4 Volume:45 Page:673-676
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Senapati Asim¹,Lou Zhao-Feng²^ORCID,Lee Jia-Yang²,Chen Yi-Pin³,Huang Shih-Yin⁴,Maikap Siddheswar¹^ORCID,Lee Min-Hung²^ORCID,Liu Chee-Wee⁵^ORCID

Affiliation:

1. Department of Electronic Engineering, Chang Gung University (CGU), Guishan, Taoyuan, Taiwan

2. Program for Semiconductor Devices, Materials, and Hetero-Integration, Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan

3. School of Traditional Chinese Medicine, College of Medicine, Chang Gung University (CGU), Taoyuan, Taiwan

4. Department of Obstetrics and Gynecology, Keelung Chang Gung Memorial Hospital (CGMH), Anle, Keelung, Taiwan

5. Department of Electrical Engineering, Graduate Institute of Electronics Engineering, the Graduate Institute of Photonics and Optoelectronics, and the Graduate School of Advanced Technology, National Taiwan University (NTU), Taipei, Taiwan

Funder

National Science and Technology Council (NSTC), Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10479122/10443693.pdf?arnumber=10443693

Reference31 articles.

1. Superlattice HfO₂-ZrO₂ based Ferro-Stack HfZrO₂ FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹ cycles for Multibit NVM

2. Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

3. The era of hyper-scaling in electronics

4. Improving Edge Dead Domain and Endurance in Scaled HfZrO_x FeRAM

5. Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory