Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM-Reference-Cited by-同舟云学术

Superlattice HfO₂-ZrO₂ based Ferro-Stack HfZrO₂ FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 10⁹ cycles for Multibit NVM

Published:2022-12-03 Issue: Volume: Page:
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Container-title:2022 International Electron Devices Meeting (IEDM)
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Author:

Liao C.-Y.¹,Lou Z.-F.¹,Lin C.-Y.¹,Senapati A.²,Karmakar R.²,Hsiang K.-Y.¹,Li Z.-X.¹,Ray W.-C.¹,Lee J.-Y.¹,Chen P.-H.³,Chang F.-S.¹,Tseng H.-H.¹,Wang C.-C.¹,Tsai J.-H.³,Tang Y.-T.⁴,Chang S. T.⁵,Liu C. W.⁶,Maikap S.²,Lee M. H.¹

Affiliation:

1. Institute and Undergraduate Program of Electro-Optical Engineering,NTNU,Taipei,Taiwan

2. CGU,Department of Electronic Engineering,Taoyuan,Taiwan

3. NTNU,Department of Electrical Engineering,Taipei,Taiwan

4. NCU,Department of Electrical Engineering,Taoyuan,Taiwan

5. NCHU,Department of Electrical Engineering,Taichung,Taiwan

6. NTU,Graduate School of Advance Technology,Taipei,Taiwan

Funder

Ministry of Science and Technology

Publisher

IEEE

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