An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier-Reference-Cited by-同舟云学术

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An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier

Published:2005 Issue: Volume: Page:
ISSN:
Container-title:IEEE MTT-S International Microwave Symposium Digest, 2005.
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Author:

Hacker J.B.,Bergman J.,Nagy G.,Sullivan G.,Kadow C.,Lin H.-K.,Gossard A.C.,Rodwell M.,Brar B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10171/32491/01516844.pdf?arnumber=1516844

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. A Wideband Highly Linear Distributed Amplifier Using Intermodulation Cancellation Technique for Stacked-HBT Cell;IEEE Transactions on Microwave Theory and Techniques;2020-07

3. Comparison of cryogenic W band low noise amplifier based on different III-V HEMT foundry process and technologies;SPIE Proceedings;2014-07-23

4. 80-110 GHz MMIC amplifiers using a 0.1-μm GaAs-based mHEMT technology;Microwave and Optical Technology Letters;2012-05-16

5. Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors;Journal of Applied Physics;2010-11

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