Publisher
Springer Science and Business Media LLC
Subject
Surfaces, Coatings and Films,Hardware and Architecture,Signal Processing
Reference22 articles.
1. Bahl, I. J. (2003). 10-W CW broadband balanced limiter/LNA fabricated using MSAG MESFET process. International Journal of RF and Microwave Computer Aided Engineering, 13(2), 118–127.
2. Bera, S. C., Basak, K., Jain, V. K., Singh, R. V., & Garg, V. K. (2010). Schottky diode-based microwave limiter with adjustable threshold power level. Microwave and Optical Technology Letters, 52(7), 1671–1673.
3. Smith, D. G. (2002). Designing reliable high-power limiter circuits with GaAs PIN diodes. In: IEEE MTT-S Digest.
4. Billstrom, N., Nilsson, M., & Estmer, K. (2010). GaAs MMIC integrated diode limiters. In: IEEE European microwave integrated circuits conference (EuMIC) (pp. 126–129).
5. Maas, A., Janssen, J., & van Vliet, F. (2007). Set of X-band distributed absorptive limiter GaAs MMICs. In: European radar conference (EuRAD) (pp. 17–20).
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