Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3503430
Reference17 articles.
1. Impact ionization suppression by quantum confinement: Effects on the DC and microwave performance of narrow-gap channel InAs/AlSb HFET's
2. An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier
3. Low-Frequency Noise in AlSb/InAs and Related HEMTs
4. Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications
5. Electrical Characterization and Small-Signal Modeling of InAs/AlSb HEMTs for Low-Noise and High-Frequency Applications
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1. InP-Based High-Electron-Mobility Transistors for High-Frequency Applications;Nanoelectronics;2019
2. Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis;Journal of Applied Physics;2018-01-21
3. An optimized fitting function with least square approximation in InAs/AlSb HFET small-signal model for characterizing the frequency dependency of impact ionization effect;Chinese Physics B;2017-05
4. Improved modeling on the RF behavior of InAs/AlSb HEMTs;Solid-State Electronics;2015-12
5. Small-signal modeling with direct parameter extraction for impact ionization effect in high-electron-mobility transistors;Journal of Applied Physics;2015-11-21
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