Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications-Reference-Cited by-同舟云学术

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Investigation of Impact Ionization in InAs-Channel HEMT for High-Speed and Low-Power Applications

Published:2007-10 Issue:10 Volume:28 Page:856-858
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chang Chia-Yuan,Hsu Heng-Tung,Chang Edward Yi,Kuo Chien-I,Datta Suman,Radosavljevic Marko,Miyamoto Yasuyuki,Huang Guo-Wei

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4317649/04317651.pdf?arnumber=4317651

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. A Comparative Analysis of Dissimilar High Electron Mobility Transistors and Applications;2023 14th International Conference on Computing Communication and Networking Technologies (ICCCNT);2023-07-06

3. Investigation of drain noise in InP pHEMTs using cryogenic on-wafer characterization;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

4. Analysis of p-GaN based high electron mobility transistor for RF power application;2022 6th International Conference on Devices, Circuits and Systems (ICDCS);2022-04-21

5. Investigation on Effect of Doped InP Subchannel Thickness and Delta-Doped InP Layer of Composite Channel HEMT;IEEE Transactions on Electron Devices;2022-03

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