Funder
National Natural Science Foundation of China
China Postdoctoral Science Foundation
National Key Project of Science and Technology
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Cited by
49 articles.
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1. A Deep Cutoff Capacitance Model for GaN Switch HEMTs;IEEE Transactions on Electron Devices;2024-09
2. Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07
3. Knowledge-Guided Neural Network based Nonlinear Current Model with Combined Loss Function;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10
4. Recent Progress of AlGaN/GaN HEMTs QPZD Model;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10
5. Parameter Extraction for Large Periphery Indigenous AlGaN/GaN HEMT Device;2024 7th International Conference on Devices, Circuits and Systems (ICDCS);2024-04-23